A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING

[1] ARIKADO T, 1985 P DRY PROC S, P114

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J]. ELECTRONICS LETTERS, 1986, 22 (24) : 1291 - 1293

[3] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[6] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[8] LASKY JB, 1985, IEDM, P648

[9] DIELECTRICALLY ISOLATED SATURATING CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 645 - &

[10] Ohashi H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P210

[1] ARIKADO T, 1985 P DRY PROC S, P114

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J]. ELECTRONICS LETTERS, 1986, 22 (24) : 1291 - 1293

[3] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[6] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[8] LASKY JB, 1985, IEDM, P648

[9] DIELECTRICALLY ISOLATED SATURATING CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 645 - &

[10] Ohashi H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P210