A TECHNOLOGY FOR HIGH-PERFORMANCE SINGLE-CRYSTAL SILICON-ON-INSULATOR TRANSISTORS

被引：20

作者：

SPANGLER, LJ

WISE, KD

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期

关键词：

D O I：

10.1109/EDL.1987.26579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 139

页数：3

共 15 条

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[8]

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[9]

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[10] MOSFETS FABRICATED IN LASER-RECRYSTALLIZED SILICON ON QUARTZ USING SELECTIVELY ABSORBING DIELECTRICAL LAYERS [J].

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