LASER CRYSTALLIZATION OF SI FILMS ON GLASS

被引：19

作者：

LEMONS, RA

BOSCH, MA

DAYEM, AH

GROGAN, JK

MANKIEWICH, PM

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：469 / 471

页数：3

共 19 条

[1] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J].

AUVERT, G ;

BENSAHEL, D ;

GEORGES, A ;

NGUYEN, VT ;

HENOC, P ;

MORIN, F ;

COISSARD, P .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :613-615

[2]

BARTHOLOMEW CH, COMMUNICATION

[3] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].

BIEGELSEN, DK ;

JOHNSON, NM ;

BARTELINK, DJ ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152

[4]

BILLINGS BH, 1963, AM I PHYSICS HDB

[5] 6 X 6-IN 20-LPI ELECTROLUMINESCENT DISPLAY PANEL [J].

BRODY, TP ;

LUO, FC ;

SZEPESI, ZP ;

DAVIES, DH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) :739-748

[6]

DEPP SW, 1980, 1980 P INT EL DEV M, P703

[7] SODIUM DIFFUSION IN SIO2 GLASS [J].

FRISCHAT, GH .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (09) :528-+

[8] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

HAYAMA, H ;

MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :754-755

[9] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J].

KAMINS, TI ;

PIANETTA, PA .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :214-216

[10] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].

LECOMBER, PG ;

SPEAR, WE ;

GHAITH, A .

ELECTRONICS LETTERS, 1979, 15 (06) :179-181

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