INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[2] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[3] BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1

[4] CRYSTALLIZATION-FRONT VELOCITY DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 292 - 295

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[7] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258

[8] MORIN F, 1979, APPL PHYS LETT, V35, P696

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 274 - 279

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[2] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[3] BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1

[4] CRYSTALLIZATION-FRONT VELOCITY DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 292 - 295

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[7] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258

[8] MORIN F, 1979, APPL PHYS LETT, V35, P696

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 274 - 279

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544