MOSFETS FABRICATED IN LASER-RECRYSTALLIZED SILICON ON QUARTZ USING SELECTIVELY ABSORBING DIELECTRICAL LAYERS

被引：8

作者：

POSSIN, GE ^{[1
]}

PARKS, HG ^{[1
]}

CHIANG, SW ^{[1
]}

LIU, YS ^{[1
]}

机构：

[1] GE,CTR RES & DEV,TECH STAFF,CID IMAGER PROJECT,SCHENECTADY,NY 12301

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 01期

关键词：

D O I：

10.1109/T-ED.1984.21475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：68 / 74

页数：7

共 18 条

[1]

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[3]

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[4]

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[7] GROWTH OF SINGLE-CRYSTAL SILICON ISLANDS ON BULK FUSED-SILICA BY CO-2 LASER ANNEALING [J].

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[8] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS [J].

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[9] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

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[10] OPTICAL-ABSORPTION COEFFICIENT OF SILICON AT 1.152-MU AT ELEVATED-TEMPERATURES [J].

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LOWNDES, DH .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :594-596

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