Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals

被引：16

作者：

Beaunier, L ^{[1
]}

Cachet, H ^{[1
]}

Froment, M ^{[1
]}

Maurin, G ^{[1
]}

机构：

[1] Univ Paris 06, UPR 15 CNRS, F-75252 Paris 05, France

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 05期

关键词：

D O I：

10.1149/1.1393443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Epitaxial CdSe layers were electrodeposited from aqueous solutions onto InP and GaAs single crystals. The analysis of current transients shows that the growth kinetics corresponds to the Scharifker model assuming a progressive nucleation followed by three-dimensional diffusion-limited growth. Diffusion control is effective after less than 0.1 s after the beginning of the potential pulse. The phenomena associated with the formation of a coherent film cannot be detected by this technique. Transmission electron microscopy observations of CdSe films with increasing thicknesses show when the diffusion control is effective, a large density of growth steps followed by the formation of epitaxial nuclei which finally coalesce. (C) 2000 The Electrochemical Society. S0013-4651(99)10-049-1. All rights reserved.

引用

页码：1835 / 1839

页数：5

共 13 条

[1] Epitaxial electrodeposition of cadmium selenide thin films on indium phosphide single crystal [J].