Enhancement-mode GaN Hybrid MOS-HFETs on Si substrates with Over 70 A operation

被引：16

作者：

Kambayashi, Hiroshi ^{[1
]}

Satoh, Yoshihiro ^{[1
]}

Niiyama, Yuki ^{[1
]}

Kokawa, Takuya ^{[1
]}

Iwami, Masayuki ^{[1
]}

Nomura, Takehiko ^{[1
]}

Kato, Sadahiro ^{[1
]}

Chow, T. Paul ^{[2
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Lab, Yokohama, Kanagawa, Japan

[2] Rennselear Polytech Inst, Troy, NY USA

来源：

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年

关键词：

POWER ELECTRONICS APPLICATIONS; FIELD-EFFECT TRANSISTORS; ION-IMPLANTATION; VOLTAGE; MOSFETS; HEMT;

D O I：

10.1109/ISPSD.2009.5157991

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific on-state resistance was 16.5 m Omega cm(2). The breakdown voltage was over 500 V. These results suggest that this structure is a good candidate for power switching applications.

引用

页码：21 / +

页数：3

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