Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation

被引：60

作者：

Kambayashi, Hiroshi ^{[1
]}

Niiyama, Yuki ^{[1
]}

Ootomo, Shinya ^{[1
]}

Nomura, Takehiko ^{[1
]}

Iwami, Masayuki ^{[1
]}

Satoh, Yoshihiro ^{[1
]}

Kato, Sadahiro ^{[1
]}

Yoshida, Seikoh ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Yokohama, Kanagawa 2200073, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 12期

关键词：

Gallium nitride (GaN); MOSFETs; normally off; silicon substrate;

D O I：

10.1109/LED.2007.909978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated n-channel gallium nitride (GaN) MOSFETs using a selective area growth (SAG) technique and ion implantation on a silicon substrate. Both MOSFETs realized good normally off operations. The MOSFET using the SAG technique showed a large drain current of 112 mA/mm, a lower leakage current, and a high field mobility of 113 cm(2)/V (.) s, which is, to our knowledge, the best for a GaN MOSFET on a silicon substrate.

引用

页码：1077 / 1079

页数：3

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