Enhancement-mode n-channel GaN MOSFETs on p-and n-GaN/sapphire substrates

被引：134

作者：

Huang, W. ^{[1
]}

Khan, T. ^{[1
]}

Chow, T. P. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Power Elect Syst, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

基金：

美国国家科学基金会;

关键词：

enhancement-mode; gallium nitride; high field-effect mobility; MOSFET;

D O I：

10.1109/LED.2006.883054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with linear and circular gate geometries, show good dc characteristics with maximum field-effect mobility of 167 cm(2)/V (.) s, best reported to date.

引用

页码：796 / 798

页数：3

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