Deep level defect in Si-implanted GaN n+-p junction

A deep level transient spectroscopy (DLTS) study has been performed on a GaN n(+)-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by the unusual appearance of a minority peak in the majority carrier DLTS spectra. The deep level defect appears to be an electron trap at E-C-0.59 eV in the p-side region of the junction and has tentatively been attributed to the V-N-Mg complex. The high concentration of this electrically active deep level defect in the depletion layer of the Si-implanted GaN n(+)-p junction diodes suggests the need for further investigations. (C) 2003 American Institute of Physics.