Electron-irradiation-induced deep level in n-type GaN

被引:103
作者
Fang, ZQ [1 ]
Hemsky, JW
Look, DC
Mack, MP
机构
[1] Wright State Univ, Dept Phys, Dayton, OH 45435 USA
[2] Univ Calif Santa Barbara, Elect & Comp Engn & Mat Dept, Santa Barbara, CA 93106 USA
[3] USAF, Wright Lab, Avion Directorate, Wright Patterson AFB, OH 45433 USA
关键词
D O I
10.1063/1.120783
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at E-C-0.18 eV. The production rate is approximately 0.2 cm(-1), lower than the rate of 1 cm(-1) found for the N vacancy by Wall-effect studies. The defect trap cannot be firmly identified at this time. (C) 1998 American Institute of Physics.
引用
收藏
页码:448 / 449
页数:2
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