GaN MOSFET with liquid phase deposited oxide gate

被引：16

作者：

Lee, KW ^{[1
]}

Chou, DW ^{[1
]}

Wu, HR ^{[1
]}

Huang, JJ ^{[1
]}

Wang, YH ^{[1
]}

Houng, MP ^{[1
]}

Chang, SJ ^{[1
]}

Su, YK ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 15期

关键词：

D O I：

10.1049/el:20020543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 mum source-to-drain distance and gate metal of 8 x 40 mum(2), a transconductance of 48 mS/mm and a drain current of 250 mA/mm at V-gs = 4 V and V-ds = 20 V can be achieved.

引用

页码：829 / 830

页数：2

共 9 条

[1] MICROWAVE PERFORMANCE OF GAN MESFETS [J].

BINARI, SC ;

ROWLAND, LB ;

KRUPPA, W ;

KELNER, G ;

DOVERSPIKE, K ;

GASKILL, DK .

ELECTRONICS LETTERS, 1994, 30 (15) :1248-1249

[2] Low interface trap density for remote plasma deposited SiO2 on n-type GaN [J].

Casey, HC ;

Fountain, GG ;

Alley, RG ;

Keller, BP ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1850-1852

[3] Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes [J].

Hong, M ;

Anselm, KA ;

Kwo, J ;

Ng, HM ;

Baillargeon, JN ;

Kortan, AR ;

Mannaerts, JP ;

Cho, AY ;

Lee, CM ;

Chyi, JI ;

Lay, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1453-1456

[4] Extremely low temperature formation of silicon dioxide on gallium arsenide [J].

Houng, MP ;

Huang, CJ ;

Wang, YH ;

Wang, NF ;

Chang, WJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5788-5792

[5] Quality optimization of liquid phase deposition SiO2 films on gallium arsenide [J].

Houng, MP ;

Wang, YH ;

Huang, CJ ;

Huang, SP ;

Horng, JH .

SOLID-STATE ELECTRONICS, 2000, 44 (11) :1917-1923

[6]

KHAN AM, 2000, IEEE ELECTR DEVICE L, V21, P63

[7] Fabrication and performance of GaN electronic devices [J].

Pearton, SJ ;

Ren, F ;

Zhang, AP ;

Lee, KP .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 30 (3-6) :55-212

[8] Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors [J].

Ren, F ;

Hong, M ;

Chu, SNG ;

Marcus, MA ;

Schurman, MJ ;

Baca, A ;

Pearton, SJ ;

Abernathy, CR .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3893-3895

[9] Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions [J].

Rotter, T ;

Mistele, D ;

Stemmer, J ;

Fedler, F ;

Aderhold, J ;

Graul, J ;

Schwegler, V ;

Kirchner, C ;

Kamp, M ;

Heuken, M .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3923-3925

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