Comparison of MOS capacitors on n- and p-type GaN

被引：68

作者：

Huang, W ^{[1
]}

Khan, T ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2006年 / 35卷 / 04期

关键词：

GaN; AC conductance; ultraviolet (UV); interface state density;

D O I：

10.1007/s11664-006-0129-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of both n- and p-type GaN metal-oxide semiconductor (MOS) capacitors utilizing plasma-enhanced CVD-SiO2 as the gate dielectric were measured. Both capacitance and conductance techniques were used to obtain the MOS properties (such as interface state density). Devices annealed at 1000 degrees C/30 min. in N-2 yielded an interface state density of 3.8 X 10(10) cm(-2) eV(-1) at 0.19 eV from the conduction band edge, and it decreased to 1.1 X 10(10) cm(-2) eV(-1) deeper into the band gap. A total fixed oxide charge density of 8 X 10(12) q cm(-2) near the valence band was estimated. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band was determined.

引用

页码：726 / 732

页数：7

共 10 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :809-811

[2] Low interface trap density for remote plasma deposited SiO2 on n-type GaN [J].

Casey, HC ;

Fountain, GG ;

Alley, RG ;

Keller, BP ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1850-1852

[3] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES [J].

CHOW, TP ;

TYAGI, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1481-1483

[4] High-quality oxide/nitride/oxide gate insulator for GaN MIS structures [J].

Gaffey, B ;

Guido, LJ ;

Wang, XW ;

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :458-464

[5] Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide [J].

Kim, J ;

Gila, B ;

Mehandru, R ;

Johnson, JW ;

Shin, JH ;

Lee, KP ;

Luo, B ;

Onstine, A ;

Abernathy, CR ;

Pearton, SJ ;

Ren, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (08) :G482-G484

[6] Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors [J].

Matocha, K ;

Gutmann, RJ ;

Chow, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) :1200-1204

[7] Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors [J].

Nakano, Y ;

Kachi, T ;

Jimbo, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (05) :2220-2222

[8] Electrical characterization of n-GaN Schottky and PCVD-SiO2/n-GaN interfaces [J].

Sawada, M ;

Sawada, T ;

Yamagata, Y ;

Imai, K ;

Kimura, H ;

Yoshino, M ;

Iizuka, K ;

Tomozawa, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :706-710

[9] Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing [J].

Sawada, T ;

Ito, Y ;

Imai, K ;

Suzuki, K ;

Tomozawa, H ;

Sakai, S .

APPLIED SURFACE SCIENCE, 2000, 159 :449-455

[10] CHARACTERIZATION AND OPTIMIZATION OF THE SIO2/SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE [J].

SHENOY, JN ;

CHINDALORE, GL ;

MELLOCH, MR ;

COOPER, JA ;

PALMOUR, JW ;

IRVINE, KG .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :303-309

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