Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

被引：60

作者：

Matocha, K ^{[1
]}

Gutmann, RJ ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 05期

基金：

美国国家科学基金会;

关键词：

conductance technique; density; gallium nitride; interface-state; MOS capacitors;

D O I：

10.1109/TED.2003.813456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN metal-oxide-semiconductor (MOS) capacitors have been used to characterize the effect of annealing temperature and ambient on GaN-insulator interface properties. Silicon dioxide was deposited on n-type GaN fit 900 degreesC by low-pressure chemical vapor deposition and MOS capacitors were fabricated. The MOS capacitors were used to characterize the GaN-SiO2 interface with a. low interface-state density of 3 x 10(11) cm(-2) eV(-1) at 0.25 eV below the conduction band edged even after annealing in N-2 at temperatures no to 1100 degreesC; however, insulator properties were degraded by annealing in NO and NH3 at 1100 degreesC.

引用

页码：1200 / 1204

页数：5

共 28 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :809-811

[2] SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES [J].

BANO, E ;

OUISSE, T ;

DICIOCCIO, L ;

KARMANN, S .

APPLIED PHYSICS LETTERS, 1994, 65 (21) :2723-2724

[3] RAPID INTERFACE PARAMETERIZATION USING A SINGLE MOS CONDUCTANCE CURVE [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :711-716

[4] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[5] Low interface trap density for remote plasma deposited SiO2 on n-type GaN [J].

Casey, HC ;

Fountain, GG ;

Alley, RG ;

Keller, BP ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1850-1852

[6] High-quality oxide/nitride/oxide gate insulator for GaN MIS structures [J].

Gaffey, B ;

Guido, LJ ;

Wang, XW ;

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :458-464

[7] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].

HASEGAWA, H ;

SAWADA, T .

THIN SOLID FILMS, 1983, 103 (1-2) :119-140

[8] Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes [J].

Hong, M ;

Anselm, KA ;

Kwo, J ;

Ng, HM ;

Baillargeon, JN ;

Kortan, AR ;

Mannaerts, JP ;

Cho, AY ;

Lee, CM ;

Chyi, JI ;

Lay, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1453-1456

[9] Thermally oxidized GaN film for use as gate insulators [J].

Kim, H ;

Park, SJ ;

Hwang, HS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (02) :579-581

[10] Charge pumping in Sc2O3/GaN gated MOS diodes [J].

Kim, J ;

Mehandru, R ;

Luo, B ;

Ren, F ;

Gila, BP ;

Onstine, AH ;

Abernaty, CR ;

Pearton, SJ ;

Irokawa, Y .

ELECTRONICS LETTERS, 2002, 38 (16) :920-921

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