Charge pumping in Sc2O3/GaN gated MOS diodes

被引：4

作者：

Kim, J ^{[1
]}

Mehandru, R

Luo, B

Ren, F

Gila, BP

Onstine, AH

Abernaty, CR

Pearton, SJ

Irokawa, Y

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 16期

关键词：

D O I：

10.1049/el:20020639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total surface state density was measured in n(+)p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650degreesC onto a p-GaN layer with hole density 2 x 10(17) cm(-3) at 25degreesC, the total surface state density was 3 x 10(12) cm(-2) after implant activation annealling to form the n(+) source and drain regions.

引用

页码：920 / 921

页数：2

共 13 条

[1]

BRUGLER JS, 1969, IEEE T ELECTRON DEV, V16, P300

[2]

Gila BP, 2001, PHYS STATUS SOLIDI A, V188, P239, DOI 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO

[3]

2-D

[4] Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition [J].