Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

被引：103

作者：

Hashizume, T

Alekseev, E

Pavlidis, D ^{[1
]}

Boutros, KS

Redwing, J

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Epitron ATMI, Phoenix, AZ 85027 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.1303722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C-2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density D-it of 1x10(11) cm(-2) eV(-1) or less around the energy position of E-c-0.8 eV was demonstrated, in agreement with an average D-it value estimated from photoassisted C-V characteristics. (C) 2000 American Institute of Physics. [S0021-8979(00)09313-0].

引用

页码：1983 / 1986

页数：4

共 16 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].