AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

被引：317

作者：

Khan, MA ^{[1
]}

Hu, X

Sumin, G

Lunev, A

Yang, J

Gaska, R

Shur, MS

机构：

[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

[3] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

[4] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 02期

关键词：

ALGaN; FET; GaN; HFET; MOSFET; MOS-HFET;

D O I：

10.1109/55.821668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-mu source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET mas more than six orders of magnitude smaller than for the HFET.

引用

页码：63 / 65

页数：3

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