SELF-ALIGNED 6H-SIC MOSFETS WITH IMPROVED CURRENT DRIVE

Surface-channel n-MOSEET devices in 6H-SiC are fabricated with n(+)-polysilicon gates on 80nm thick gate oxide using a self-aligned process. The mobility and subthreshold slope, 40cm(2)/Vs and 500mV/decade, are comparable to MOSFETs fabricated with a non-self-aligned process. These MOSFETs exhibit a saturation drain current of 18 mA/mm at 340 degrees C when the gate is 9V above threshold. This current density is approximately three times higher than the best self-aligned 6H-SiC MOSFETs reported to date. and approximately five times higher if scaled to the same oxide thickness.