SELF-ALIGNED 6H-SIC MOSFETS WITH IMPROVED CURRENT DRIVE

被引:9
作者
PAN, JN
COOPER, JA
MELLOCH, MR
机构
[1] School of Electrical Engineering, Purdue University, West Lafayette
关键词
MOSFETS; SILICON CARBIDE;
D O I
10.1049/el:19950800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Surface-channel n-MOSEET devices in 6H-SiC are fabricated with n(+)-polysilicon gates on 80nm thick gate oxide using a self-aligned process. The mobility and subthreshold slope, 40cm(2)/Vs and 500mV/decade, are comparable to MOSFETs fabricated with a non-self-aligned process. These MOSFETs exhibit a saturation drain current of 18 mA/mm at 340 degrees C when the gate is 9V above threshold. This current density is approximately three times higher than the best self-aligned 6H-SiC MOSFETs reported to date. and approximately five times higher if scaled to the same oxide thickness.
引用
收藏
页码:1200 / 1201
页数:2
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