NONEQUILIBRIUM CHARACTERISTICS OF THE GATE-CONTROLLED DIODE IN 6H-SIC

被引：38

作者：

SHEPPARD, ST

COOPER, JA

MELLOCH, MR

机构：

[1] School of Electrical Engineering, Purdue University, West Lafayette

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.357017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N+-P gate-controlled diodes are fabricated in the wide band gap semiconductor 6H-SiC by thermal oxidation and ion implantation of nitrogen. Room temperature capacitance-voltage characteristics display a ''hook and ledge'' hysteresis, which has been observed in Si gate-controlled diodes at 77 K. In these samples of p-type doping 2.8 x 10(16) cm-3, the surface state density is about 4x 10(12) cm-2.

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页码：3205 / 3207

页数：3

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