CHARACTERISTICS OF INVERSION-CHANNEL AND BURIED-CHANNEL MOS DEVICES IN 6H-SIC

被引：73

作者：

SHEPPARD, ST ^{[1
]}

MELLOCH, MR ^{[1
]}

COOPER, JA ^{[1
]}

机构：

[1] PURDUE UNIV,OPTOELECTR RES CTR,W LAFAYETTE,IN 47907

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 07期

关键词：

D O I：

10.1109/16.293356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inversion-channel and buried-channel gate-controlled diodes and MOSFET's are investigated in the wide bandgap semiconductor 6H-SiC. These devices are fabricated using thermal oxidation and ion implantation. The gate-controlled diodes allow room temperature measurement of surface states, which is difficult with MOS capacitors due to the 3 eV bandgap of 6H-SiC. An effective electron mobility of 20 cm2/VS is measured for the inversion-channel devices and a bulk electron mobility of 180 CM2/VS is found in the channel of the buried-channel MOSFET. The buried-channel transistor is the first ion-implanted channel device in SiC and the first buried-channel MOSFET in the 6H-SiC polytype.

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页码：1257 / 1264

页数：8

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