HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT

被引：22

作者：

BILLON, T ^{[1
]}

OUISSE, T ^{[1
]}

LASSAGNE, P ^{[1
]}

JASSAUD, C ^{[1
]}

PONTHENIER, JL ^{[1
]}

BAUD, L ^{[1
]}

BECOURT, N ^{[1
]}

MORFOULI, P ^{[1
]}

机构：

[1] ENSERG,PHYS COMPOSANTS SEMICOND LAB,CNRS,URA 840,F-38016 GRENOBLE,FRANCE

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 02期

关键词：

MOSFETS; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19940098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inversion mode n-channel MOSFETs have been built on (6H) silicon carbide (SiC) substrates, with thermal oxide as the gate insulator, and with channel lengths ranging from 1 to 25 mu m. Drain leakage currents lower than 0.04pA/mu m channel width have been experimentally obtained at temperatures up to 400 degrees C and V-d = 5V.

引用

页码：170 / 171

页数：2

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