FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100)

[1] Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625

[2] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[3] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 763 - 765

[4] MARSH OJ, 1974, SILICON CARBIDE 1973, P471

[5] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[6] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 249 - 254

[7] MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P479, DOI 10.1016/0038-1101(78)90283-6

[8] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[9] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[10] NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[1] Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625

[2] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[3] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 763 - 765

[4] MARSH OJ, 1974, SILICON CARBIDE 1973, P471

[5] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[6] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 249 - 254

[7] MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P479, DOI 10.1016/0038-1101(78)90283-6

[8] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[9] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[10] NISHINO S, 1983, 15TH C SOL STAT DEV, P317