CHARACTERIZATION OF DEVICE PARAMETERS IN HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS

被引：99

作者：

PALMOUR, JW ^{[1
]}

KONG, HS ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2168 / 2177

页数：10

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