THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH

被引：62

作者：

KIM, HJ ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期

关键词：

D O I：

10.1149/1.2108406

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2350 / 2357

页数：8

相关论文

共 19 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI
ADDAMIANO, A
SPRAGUE, JA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527
[2] BARTLETT RW, 1969, MATER RES B, V4, P5341
[3] SILICON EPITAXY FROM MIXTURES OF SIH4 AND HC1
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1397 - &
[4] COMBS JF, 1963, SEMICONDUCT PROD SOL, V6, P26
[5] ERIKSSON G, 1975, CHEM SCRIPTA, V8, P100
[6] Lely A, 1955, BER DEUT KERAM GES, V8, P229
[7] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS
LIAW, P
DAVIS, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) : 642 - 648
[8] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM
MATSUNAMI, H
NISHINO, S
TANAKA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 138 - 143
[9] PREPARATION OF PURE AND DOPED SILICON-CARBIDE BY PYROLYSIS OF SILANE COMPOUNDS
MUENCH, WV
PETTENPAUL, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 294 - 299
[10] NGUENNGO, 1970, OPT SPECTROSC-USSR, V29, P388