3C-SIC P-N-JUNCTION DIODES

[1] Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625

[2] MUENCH WV, 1977, J APPL PHYS, V48, P4831, DOI 10.1063/1.323509

[3] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[4] Ryan, 1969, MATER RES B, V4, pS1

[5] EPITAXIAL-GROWTH OF BETA-SIC SINGLE-CRYSTALS BY SUCCESSIVE 2-STEP CVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 287 - 290

[1] Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625

[2] MUENCH WV, 1977, J APPL PHYS, V48, P4831, DOI 10.1063/1.323509

[3] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[4] Ryan, 1969, MATER RES B, V4, pS1

[5] EPITAXIAL-GROWTH OF BETA-SIC SINGLE-CRYSTALS BY SUCCESSIVE 2-STEP CVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 287 - 290