BETA-SIC MESFETS AND BURIED-GATE JFETS

被引：19

作者：

KELNER, G ^{[1
]}

BINARI, S ^{[1
]}

SLEGER, K ^{[1
]}

KONG, H ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

关键词：

D O I：

10.1109/EDL.1987.26682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：428 / 430

页数：3

共 13 条

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