INSULATED-GATE AND JUNCTION-GATE FETS OF CVD-GROWN BETA-SIC

被引：18

作者：

FURUKAWA, K

HATANO, A

UEMOTO, A

FUJII, Y

NAKANISHI, K

SHIGETA, M

SUZUKI, A

NAKAJIMA, S

机构：

来源：

关键词：

D O I：

10.1109/EDL.1987.26547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：48 / 49

页数：2

共 5 条

[1] 3C-SIC P-N-JUNCTION DIODES
FURUKAWA, K
UEMOTO, A
SHIGETA, M
SUZUKI, A
NAKAJIMA, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1536 - 1537
[2] EXPERIMENTAL 3C-SIC MOSFET
KONDO, Y
TAKAHASHI, T
ISHII, K
HAYASHI, Y
SAKUMA, E
MISAWA, S
DAIMON, H
YAMANAKA, M
YOSHIDA, S
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406
[3] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
NISHINO, S
POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[4] METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF CHEMICAL VAPOR-DEPOSITED CUBIC-SIC
SHIBAHARA, K
NISHINO, S
MATSUNAMI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L862 - L864
[5] EPITAXIAL-GROWTH OF BETA-SIC SINGLE-CRYSTALS BY SUCCESSIVE 2-STEP CVD
SUZUKI, A
FURUKAWA, K
HIGASHIGAKI, Y
HARADA, S
NAKAJIMA, S
INOGUCHI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 287 - 290