METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF CHEMICAL VAPOR-DEPOSITED CUBIC-SIC

被引：28

作者：

SHIBAHARA, K

NISHINO, S

MATSUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L862 / L864

页数：3

共 13 条

[1] STUDY OF CHARGING AND DISSOCIATION OF SIO2 SURFACES BY AES
CARRIERE, B
LANG, B
[J]. SURFACE SCIENCE, 1977, 64 (01) : 209 - 223
[2] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS
FERRY, DK
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2361 - 2369
[3] BEHAVIOR OF MOS INVERSION LAYERS AT LOW TEMPERATURE
GOETZBER.A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 787 - &
[4] INTERFACE CHARACTERISTICS OF THERMAL SIO2 ON SIC
KEE, RW
GEIB, KM
WILMSEN, CW
FERRY, DK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1520 - 1523
[5] MARSHALL RC, 1974, SILICON CARBIDE 1973, P673
[6] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES
MATSUNAMI, H
NISHINO, S
ONO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236
[7] Nicollian E. H., 1982, MOS PHYS TECHNOLOGY, P319
[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
NISHINO, S
POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[9] NISHINO S, 1984, 16TH INT C SOL STAT, P8
[10] NISHINO S, 1983, 15TH C SOL STAT DEV, P317