AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS

被引：27

作者：

VANOPDORP, C

VRAKKING, J

机构：

[1] Philips Research Laboratories, N. V. Philips Gloeilampenfabrieken, Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.1657980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reverse current-voltage characteristics of epitaxial SiC p-n junctions were investigated. After electrolytic etching the junctions showed sharp breakdown. The largest value found for the maximum field at breakdown is 5×106 V/cm. Microplasma pulses were observed analogous to but three orders-of-magnitude smaller than those hitherto reported for other materials. © 1969 The American Institute of Physics.

引用

页码：2320 / +

页数：1

共 8 条

[1] ETCHING OF ALPHA-SILICON CARBIDE [J].