Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes

被引：156

作者：

Wahab, Q ^{[1
]}

Ellison, A

Henry, A

Janzén, E

Hallin, C

Di Persio, J

Martinez, R

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] ABB Corp Res, S-72178 Vasteras, Sweden

[3] Univ Sci & Tech Lille Flandres Artois, F-59665 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期

关键词：

D O I：

10.1063/1.126456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Morphological defects and elementary screw dislocations in 4H-SiC were studied by high voltage Ni Schottky diodes. Micropipes were found to severely limit the performance of 4H-SiC power devices, whereas carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by x-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher. (C) 2000 American Institute of Physics. [S0003-6951(00)01119-0].

引用

页码：2725 / 2727

页数：3

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