Crystalline structure changes in GaN films grown at different temperatures

被引:23
作者
Lin, HC
Ou, J
Chen, WK
Chen, WH
Lee, MC
机构
[1] Natl Chiao Tung Univ, Hsinchu, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 5B期
关键词
GaN; crystalline structure; Raman scattering; photoluminescence;
D O I
10.1143/JJAP.36.L598
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin GaN films were grown on (0001) sapphire at various temperatures between 520 and 1050 degrees C using metalorganic chemical vapor deposition (MOCVD). Optical properties and crystalline structures of the films were investigated by means of photoluminescence, Raman scattering, and X-ray diffraction. A noticeable structure transition occurred at around 750 degrees C with higher growth temperatures favoring the hexagonal structure and lower ones the cubic. Defect formation was also seen to be temperature dependent. The yellow luminescence which was clearly observed in our 700-850 degrees C films was attributable to the cubic and hexagonal structure mixing. The drastic reduction of yellow luminescence and the substantial enhancement of near band edge emission in the 950-1050 degrees C films indicated that this temperature range is optimum for growing high quality wurtzite films.
引用
收藏
页码:L598 / L600
页数:3
相关论文
共 19 条
[1]   Fundamental optical transitions in GaN [J].
Chen, GD ;
Smith, M ;
Lin, JY ;
Jiang, HX ;
Wei, SH ;
Khan, MA ;
Sun, CJ .
APPLIED PHYSICS LETTERS, 1996, 68 (20) :2784-2786
[2]   DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].
DINGLE, R ;
ILEGEMS, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&
[3]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].
GLASER, ER ;
KENNEDY, TA ;
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336
[4]   The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition [J].
Grudowski, PA ;
Holmes, AL ;
Eiting, CJ ;
Dupuis, RD .
APPLIED PHYSICS LETTERS, 1996, 69 (24) :3626-3628
[5]   THE ROLE OF THE LOW-TEMPERATURE BUFFER LAYER AND LAYER THICKNESS IN THE OPTIMIZATION OF OMVPE GROWTH OF GAN ON SAPPHIRE [J].
HERSEE, SD ;
RAMER, J ;
ZHENG, K ;
KRANENBERG, C ;
MALLOY, K ;
BANAS, M ;
GOORSKY, M .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1519-1523
[6]   PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS [J].
HONG, CH ;
PAVLIDIS, D ;
BROWN, SW ;
RAND, SC .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) :1705-1709
[7]   Optical characterization of surfaces during epitaxial growth using RDS and GIXS [J].
Kamiya, I ;
Mantese, L ;
Aspnes, DE ;
Kisker, DW ;
Fuoss, PH ;
Stephenson, GB ;
Brennan, S .
JOURNAL OF CRYSTAL GROWTH, 1996, 163 (1-2) :67-77
[8]   HIGH-QUALITY ALN AND GAN EPILAYERS GROWN ON (00.1) SAPPHIRE, (100), AND (111) SILICON SUBSTRATES [J].
KUNG, P ;
SAXLER, A ;
ZHANG, X ;
WALKER, D ;
WANG, TC ;
FERGUSON, I ;
RAZEGHI, M .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :2958-2960
[9]   Influence of moisture and oxygen on the formation of cubic phase GaN in halide vapor phase epitaxial growth [J].
Kuznetsov, AV ;
Rakova, EV ;
Lee, SS ;
Chong, PJ .
JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) :458-467
[10]   HETEROEPITAXY, POLYMORPHISM, AND FAULTING IN GAN THIN-FILMS ON SILICON AND SAPPHIRE SUBSTRATES [J].
LEI, T ;
LUDWIG, KF ;
MOUSTAKAS, TD .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4430-4437