Microtraps for neutral atoms using superconducting structures in the critical state

被引：16

作者：

Emmert, A. ^{[1
]}

Lupascu, A. ^{[1
,2
]}

Brune, M. ^{[1
]}

Raimond, J. -M. ^{[1
]}

Haroche, S. ^{[1
,3
]}

Nogues, G. ^{[1
]}

机构：

[1] Univ Paris 06, ENS, CNRS, Lab Kastler Brossel, F-75231 Paris 05, France

[2] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada

[3] Coll France, F-75231 Paris 05, France

来源：

PHYSICAL REVIEW A | 2009年 / 80卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

BOSE-EINSTEIN CONDENSATION; MAGNETIC-FIELD;

D O I：

10.1103/PhysRevA.80.061604

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Recently demonstrated superconducting atom chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the trapping structures. For type-II superconductors, this distribution is hysteretic in the critical state due to the partial penetration of the magnetic field in the thin superconducting film through pinned vortices. We report here an experimental observation of this memory effect. Our results are in good agreement with the predictions of the Bean model of the critical state without adjustable parameters. The memory effect allows to write and store permanent currents in micron-sized superconducting structures and paves the way toward engineered trapping potentials.

引用

页数：4

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