Adatom kinetics on and below the surface: The existence of a new diffusion channel

被引：292

作者：

Neugebauer, J

Zywietz, TK

Scheffler, M

Northrup, JE

Chen, H

Feenstra, RM

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[3] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.90.056101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic layer rather than on top of the surface. Based on this concept, we interpret recent experiments: We explain why and when In acts as a surfactant on GaN surfaces, why Ga acts as an autosurfactant, and how this mechanism can be used to optimize group-III nitride growth.

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页数：4

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