Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces

被引：89

作者：

Chen, HJ ^{[1
]}

Feenstra, RM

Northrup, JE

Zywietz, T

Neugebauer, J

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.85.1902

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relative weakness of the In-N bond compared to Ga-N. Theory indicates that In will preferentially bind at the edges and interior of the structures, thereby giving rise to an inhomogeneous In distribution at the surface.

引用

页码：1902 / 1905

页数：4

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