Variation of Raman feature on excitation wavelength in silicon nanowires

被引：39

作者：

Zhang, SL ^{[1
]}

Ding, W ^{[1
]}

Yan, Y ^{[1
]}

Qu, J ^{[1
]}

Li, B ^{[1
]}

Li, LY ^{[1
]}

Yue, KT ^{[1
]}

Yu, DP ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1527228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A variation of Raman feature on excitation wavelength in silicon nanowires was observed. Based on the quantum size confinement effect, the resonant Raman scattering phenomenon and the existence of different sizes of Si grains in the samples, a plausible mechanism to interpret the novel feature was proposed and supported by experimental facts. (C) 2002 American Institute of Physics.

引用

页码：4446 / 4448

页数：3

共 8 条

[1] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[2] Raman spectral study of silicon nanowires [J].

Li, BB ;

Yu, DP ;

Zhang, SL .

PHYSICAL REVIEW B, 1999, 59 (03) :1645-1648

[3]

LONG DA, 1997, RAMAN SPECTROSCOPY

[4]

PHILIPPE MF, 1991, LIGHT SCATTERING SEM

[5] Diameter-selective Raman scattering from vibrational modes in carbon nanotubes [J].

Rao, AM ;

Richter, E ;

Bandow, S ;

Chase, B ;

Eklund, PC ;

Williams, KA ;

Fang, S ;

Subbaswamy, KR ;

Menon, M ;

Thess, A ;

Smalley, RE ;

Dresselhaus, G ;

Dresselhaus, MS .

SCIENCE, 1997, 275 (5297) :187-191

[6] BAND-GAP OF A SILICON QUANTUM-WIRE [J].

SHEN, MY ;

ZHANG, SL .

PHYSICS LETTERS A, 1993, 176 (3-4) :254-258

[7] Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature [J].

Yu, DP ;

Lee, CS ;

Bello, I ;

Sun, XS ;

Tang, YH ;

Zhou, GW ;

Bai, ZG ;

Zhang, Z ;

Feng, SQ .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :403-407

[8] Effect of defects on optical phonon Raman spectra in SiC nanorods [J].

Zhang, SL ;

Zhu, BF ;

Huang, FM ;

Yan, Y ;

Shang, EY ;

Fan, SS ;

Han, WG .

SOLID STATE COMMUNICATIONS, 1999, 111 (11) :647-651

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