BAND-GAP OF A SILICON QUANTUM-WIRE

被引：17

作者：

SHEN, MY ^{[1
]}

ZHANG, SL ^{[1
]}

机构：

[1] BEIJING UNIV,NATL LAB ARTIFICIAL MICROSTRUCT & MESOSCOP PHYS,BEIJING 1000871,PEOPLES R CHINA

来源：

PHYSICS LETTERS A | 1993年 / 176卷 / 3-4期

关键词：

D O I：

10.1016/0375-9601(93)91045-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energy band gaps of silicon quantum wires have been calculated with an empirical pseudopotential method. It was found that the energy band structures of the wires along the wire direction are approximately those of a direct-pp-like semiconductor. Also the relation between the size and the energy band gaps of a silicon quantum wire was given. Using the calculated results, we analysed the photoluminescence from porous silicon.

引用

页码：254 / 258

页数：5

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