Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: weakening of the dimer bond by the addition of hydrogen

被引：17

作者：

Lauridsen, EM ^{[1
]}

Baker, J

Nielsen, M

Feidenhans'l, R

Falkenberg, G

Bunk, I

Zeysing, JH

Johnson, RL

机构：

[1] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

来源：

SURFACE SCIENCE | 2000年 / 453卷 / 1-3期

关键词：

hydrogen atom; silicon; surface relaxation and reconstruction; X-ray scattering; diffraction; and reflection;

D O I：

10.1016/S0039-6028(00)00314-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atomic structure of the monohydride Si(001)-(2 x 1)-H reconstruction has been investigated by surface X-ray diffraction. Atomic relaxations down to the eighth layer have been determined. The bond length of the hydrogenated silicon dimers was found to be 2.47 +/- 0.02 Angstrom. which is longer than the dimer bond of the clean (2 x 1)-reconstructed Si(001) surface and also 5% longer than the bulk bond length of 2.35 Angstrom. The differences to the (2 x 1) structure of the clean surface are discussed in terms of the elimination of the weak pi-bond character of the dimer bond by the addition of hydrogen. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：18 / 24

页数：7

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