Ab initio molecular dynamics of H-2 desorption from Si(100)-2x1

被引:22
作者
daSilva, AJR [1 ]
Radeke, MR [1 ]
Carter, EA [1 ]
机构
[1] UNIV CALIF LOS ANGELES,DEPT CHEM & BIOCHEM,LOS ANGELES,CA 90095
关键词
ab initio quantum chemical methods and calculations; hydrogen; models of surface chemical reactions; molecular dynamics; silicon;
D O I
10.1016/S0039-6028(97)00124-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present the first ab initio molecular dynamics (AIMD) trajectories of two competing mechanisms proposed for II, desorption from Si(100)-2 x 1. We show that silicon dihydride species are the most likely desorption precursors and that surface corrugation is responsible for focusing desorbing trajectories, based on comparisons with experimental dynamical data. The equal roles played by the transition state (TS) structure and post-detachment dynamics is emphasized. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:L628 / L635
页数:8
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