Estimation and measurement of junction temperatures in a three-level voltage source converter

被引:105
作者
Brueckner, Thomas [1 ]
Bernet, Steffen
机构
[1] Converteam GmbH, D-12277 Berlin, Germany
[2] Tech Univ Berlin, Inst Energy & Automat Technol, D-10587 Berlin, Germany
关键词
insulated gate bipolar transistors (IGBT); junction temperature measurement; neutral point clamped voltage source converter (NPC VSC); thermal modeling;
D O I
10.1109/TPEL.2006.886651
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
The design of a power converter must guarantee that the operating junction temperatures nu(j) of all devices do not exceed their limits under all specified operating conditions. Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and thermal models and semiconductor datasheet values. This paper discusses the difficulties and quantifies the limitations of this approach on the example of a three-level neutral point clamped voltage source converter (NPC VSC) with insulated gate bipolar transistors. The calculations are compared to the results of direct junction temperature measurements with an infrared camera. The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC.
引用
收藏
页码:3 / 12
页数:10
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