Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

被引：19

作者：

Camara, N ^{[1
]}

Zekentes, K ^{[1
]}

机构：

[1] Fdn Res & Technol Hellas, Vassilika Vouton, Iraklion 71110, Crete, Greece

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 11期

关键词：

silicon carbide; reactive ion etching; optical emission spectroscopy; laser interferometry;

D O I：

10.1016/S0038-1101(02)00129-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical emission spectroscopy (OES) and laser interferometry (LI) were investigated as monitoring methods during reactive ion etching (RIE) of hexagonal SiC in SF6/Ar gas mixtures. The etch rate and the surface roughness were monitored by LI, while at the same time OES monitored the intensity of the fluorine-related 704 nm line. It was found that the etch rate is directly related to the above intensity and not to the self-induced DC-bias. This explains the very high etch rates obtained at high pressures (150-250 mTorr) despite the low DC-bias values (similar to100 V). Etch rates higher than 400 nm/min were achieved for 400 W of rf power. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1959 / 1963

页数：5