Low-temperature crystallization of sol-gel-derived lead zirconate titanate thin films using 2.45 GHz microwaves

被引：37

作者：

Bhaskar, Ankam ^{[1
]}

Chang, T. H.

Chang, H. Y.

Cheng, S. Y.

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[2] Natl Taiwan Ocean Univ, Dept Marine Engn, Chilung, Taiwan

[3] Ind Technol Res Inst, Mat Lab, Hsinchu 31060, Taiwan

[4] Ind Technol Res Inst, Chem Res Lab, Hsinchu 31060, Taiwan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 05期

关键词：

microwave annealing; surface roughness; dielectric properties; hysteresis loops; lead zirconate titanate;

D O I：

10.1016/j.tsf.2006.08.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO2/Si substrate using a spin coating sol-gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 degrees C for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35 degrees. The surface roughness of the PZT thin film was 1.63 lim. Well-saturated ferroelectric properties were obtained with a remanent polarization of 46.86 mu C/Cm-2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dielectric properties with a dielectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700 degrees C for 30 min. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2891 / 2896

页数：6

共 23 条

[1] Microwave processing of ceramics [J].