Extension of 193 nm dry lithography to 45-nm half-pitch node: Double exposure and double processing technique

被引:8
作者
Biswas, Abani M. [1 ]
Li, Jianliang [1 ]
Hiserote, Jay A. [1 ]
Melvin, Lawrence S., III [1 ]
机构
[1] Synopsis Inc, Synopsys Technol Pk,2025 NW Cornelius Pass Rd, Hillsboro, OR 97124 USA
来源
PHOTOMASK TECHNOLOGY 2006, PTS 1 AND 2 | 2006年 / 6349卷
关键词
photolithography; double exposure; 45-nm half-pitch node; focus latitude; process nonlinearity; OPC;
D O I
10.1117/12.692285
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45 nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45 nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193 nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the kappa(1) barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45 nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45 nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.
引用
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页数:9
相关论文
共 13 条
[1]  
[Anonymous], 1879, PHIL MAG
[2]  
Born M., 1999, PRINCIPLES OPTICS EL, P298
[3]   Quantum interferometric optical lithography: Exploiting entanglement to beat the diffraction limit [J].
Boto, AN ;
Kok, P ;
Abrams, DS ;
Braunstein, SL ;
Williams, CP ;
Dowling, JP .
PHYSICAL REVIEW LETTERS, 2000, 85 (13) :2733-2736
[4]  
BRUECK SRJ, 2004, P SOC PHOTO-OPT INS, V5377, P135
[5]  
EBIHARA T, 2003, P SOC PHOTO-OPT INS, V5626, P985
[6]   Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance [J].
Hinsberg, W ;
Houle, FA ;
Hoffnagle, J ;
Sanchez, M ;
Wallraff, G ;
Morrison, M ;
Frank, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3689-3694
[7]   Edge lithography as a means of extending the limits of optical and non-optical lithographic resolution [J].
Holmes, SJ ;
Furukawa, T ;
Hakey, MC ;
Horak, DV ;
Rabidoux, PA ;
Chen, KJ ;
Huang, WS ;
Khojasteh, M ;
Patel, N .
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 :348-357
[8]  
RAYLEIGH, 1879, PHILOS MAG, V8, P477
[9]  
RAYLEIGH, 1880, PHILOS MAG, V9, P40
[10]  
Rayleigh L., 1879, Phil. Mag, V8, P261, DOI DOI 10.1080/14786447908639684