Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

被引:254
作者
Rogers, JA [1 ]
Paul, KE [1 ]
Jackman, RJ [1 ]
Whitesides, GM [1 ]
机构
[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138
关键词
D O I
10.1063/1.118988
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask, This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces, It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique. (C) 1997 American Institute of Physics.
引用
收藏
页码:2658 / 2660
页数:3
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