Effects of phonon coupling and free carriers on band-edge emission at room temperature in n-type ZnO crystals

被引：31

作者：

Giles, N. C.

Xu, Chunchuan

Callahan, M. J.

Wang, Buguo

Neal, J. S.

Boatner, L. A.

机构：

[1] Solid State Sci Corp, Hollis, NH 03049 USA

[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[3] USAF, Res Lab, Hanscom Air Force Base, Bedford, MA 01731 USA

[4] Oak Ridge Natl Lab, Ctr Radiat Detect Mat & Syst, Oak Ridge, TN 37831 USA

[5] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2410225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoluminescence has been studied in n-type bulk ZnO crystals representing three different growth methods and having free-carrier concentrations (n) ranging from 10(13) to 10(18) cm(-3). The near-band-edge emission has both free-exciton and free-exciton-phonon contributions, with the strength of the phonon coupling dependent on sample defect concentrations. Band-gap shrinkage effects are used to explain a decrease in emission energy for the higher n values. Band filling and band nonparabolicity are predicted to be important for n q > 10(19) cm(-3). At 300 K, in the absence of free carriers, the free-exciton energy is 3.312 +/- 0.004 eV. (c) 2006 American Institute of Physics.

引用

页数：3

共 17 条

[1] Photoluminescence of n-type CdGeAS2 [J].