Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

被引:60
作者
Bradford, C [1 ]
O'Donnell, CB [1 ]
Urbaszek, B [1 ]
Balocchi, A [1 ]
Morhain, C [1 ]
Prior, KA [1 ]
Cavenett, BC [1 ]
机构
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
关键词
D O I
10.1063/1.126824
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well. (C) 2000 American Institute of Physics. [S0003-6951(00)02226-9].
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页码:3929 / 3931
页数:3
相关论文
共 12 条
[1]  
Bradford C., UNPUB
[2]   SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].
CHENG, TS ;
JENKINS, LC ;
HOOPER, SE ;
FOXON, CT ;
ORTON, JW ;
LACKLISON, DE .
APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511
[3]   Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy [J].
Kumano, H ;
Nashiki, H ;
Suemune, I ;
Arita, M ;
Obinata, T ;
Suzuki, H ;
Uesugi, K ;
Nakahara, J .
PHYSICAL REVIEW B, 1997, 55 (07) :4449-4455
[4]   DEPENDENCE OF THE DENSITY AND TYPE OF STACKING-FAULTS ON THE SURFACE-TREATMENT OF THE SUBSTRATE AND GROWTH MODE IN ZNSXSE1-X/ZNSE BUFFER LAYER GAAS HETEROSTRUCTURES [J].
KUO, LH ;
SALAMANCARIBA, L ;
WU, BJ ;
HOFLER, G ;
DEPUYDT, JM ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1995, 67 (22) :3298-3300
[5]  
Kuo LH, 1996, APPL PHYS LETT, V68, P2413, DOI 10.1063/1.116151
[6]   Excitonic luminescence up to room temperature in a ZnSe/MgS superlattice [J].
Nashiki, H ;
Suemune, I ;
Kumano, H ;
Suzuki, H ;
Obinata, T ;
Uesugi, K ;
Nakahara, J .
APPLIED PHYSICS LETTERS, 1997, 70 (18) :2350-2352
[7]   Quaternary alloy Zn1-xMgxSySe1-y [J].
Okuyama, H ;
Kishita, Y ;
Ishibashi, A .
PHYSICAL REVIEW B, 1998, 57 (04) :2257-2263
[8]   EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].
OKUYAMA, H ;
NAKANO, K ;
MIYAJIMA, T ;
AKIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623
[9]  
Suemune I, 1997, PHYS STATUS SOLIDI B, V202, P845, DOI 10.1002/1521-3951(199708)202:2<845::AID-PSSB845>3.0.CO
[10]  
2-8