DEPENDENCE OF THE DENSITY AND TYPE OF STACKING-FAULTS ON THE SURFACE-TREATMENT OF THE SUBSTRATE AND GROWTH MODE IN ZNSXSE1-X/ZNSE BUFFER LAYER GAAS HETEROSTRUCTURES

A systematic dependence of the density and type of stacking fault defects with substrate surface chemistry and film growth mode was observed in ZnSe-based films grown on GaAs substrates. Namely, the density of Frank-type stacking faults is very large for films grown on Ga-rich surfaces, but is very low for films grown on As-stabilized surfaces exposed to Zn prior to the growth of the film. In contrast, the density of Shockley-type stacking faults increases for films grown by 3D growth mode at the initial stages of growth, but decreases greatly if the films are grown by the layer-by-layer growth mode. Films with stacking fault densities as low as similar to 1x10(4)/cm(2) were obtained by growing the films by the layer-by-layer growth on GaAs epilayers with As-stabilized surfaces that were exposed to Zn for 1-2 min prior to the growth of the films. (C) 1995 American Institute of Physics.