Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer

被引：15

作者：

Hayashi, T ^{[1
]}

Yoshihara, M ^{[1
]}

Ohmi, S ^{[1
]}

Tokumitsu, E ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

ferroelectrics; BaMgF4; AlGaAs; GaAs; nonvolatile memory;

D O I：

10.1016/S0169-4332(97)80117-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ferroelectric BaMgF4 films have been grown on GaAs substrates with and without an AlGaAs buffer layer for metal-ferroelectric-semiconductor field effect transistor (MFSFET) applications. II is: shown that the temperature range of 530-570 degrees C is suitable to grow the (140)-oriented BaMgF4 films on GaAs. Furthermore, it is demonstrated that the AlGaAs buffer layer is effective to reduce the leakage current. Capacitance-voltage (C-V) characteristics of Al/BaMgF4/AlGaAs/n-GaAs/n(+)-GaAs(100) structures show a hysteresis loop with a counterclockwise trace, demonstrating the ferroelectric nature of the BaMgF, film, On the other hand, the BaMgF4, film directly grown on GaAs substrates has Clockwise-hysteresis loops due to the charge injections. It is also shown that the remanent polarization estimated from the polarization-electric field (P-E) characteristics is as large as 1.2 mu C/cm(2).

引用

页码：418 / 422

页数：5

共 11 条

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