CRYSTALLINE QUALITY AND ELECTRICAL-PROPERTIES OF PBZRXTI1-XO3 THIN-FILMS PREPARED ON SRTIO3-COVERED SI SUBSTRATES

被引:84
作者
TOKUMITSU, E
ITANI, K
MOON, BK
ISHIWARA, H
机构
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 226
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词
FERROELECTRIC FILM; PBZRXTI1-XO3 (PZT); SRTIO3 (STO); SI; METAL-FERROELECTRIC-SEMICONDUCTOR (MFS) FET;
D O I
10.1143/JJAP.34.5202
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the crystalline quality and electrical properties of PbZrxTi1-xO3 (PZT) films grown on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and the sol-gel technique, respectively. It is shown that by using a thin (8 nm) metal Sr layer or fluoride (SrF2, CaF2) predeposition layers prior to the STO deposition, which reduces the SiO2 layer at the Si surface, highly oriented STO and PZT thin films can he grown on Si(100) and (111) substrates. Crystalline orientation of the PZT films strongly depends on the crystalline orientation of thr STO buffer layers. It is also shown that the full width at half-maximum (FWHM) values of X-ray diffraction (XRD) peaks from PZT films are strongly related to those of STO buffer layers. Furthermore, the capacitance-voltage characteristics and current response measurements indicate the ferroelectric nature of PZT films grown on STO-covered Si substrates.
引用
收藏
页码:5202 / 5206
页数:5
相关论文
共 12 条
  • [1] PROPOSAL OF ADAPTIVE-LEARNING NEURON CIRCUITS WITH FERROELECTRIC ANALOG-MEMORY WEIGHTS
    ISHIWARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 442 - 446
  • [2] ROLES OF BUFFER LAYERS IN EPITAXIAL-GROWTH OF SRTIO(3) FILMS ON SILICON SUBSTRATES
    MOON, BK
    ISHIWARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1472 - 1477
  • [3] GROWTH OF CRYSTALLINE SRTIO3 FILMS ON SI SUBSTRATES USING THIN FLUORIDE BUFFER LAYERS AND THEIR ELECTRICAL-PROPERTIES
    MOON, BK
    ISHIWARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5911 - 5916
  • [4] MOON BK, 1994, MATER RES SOC SYMP P, V341, P113, DOI 10.1557/PROC-341-113
  • [5] EPITAXIAL-GROWTH AND ELECTRICAL-PROPERTIES OF FERROELECTRIC PB(ZR0.9TI0.1)O3 FILMS BY REACTIVE SPUTTERING
    OKAMURA, T
    ADACHI, M
    SHIOSAKI, T
    KAWABATA, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05): : 1034 - 1037
  • [6] PREPARATION OF PBTIO3 THIN-FILM ON SI BY ARF EXCIMER-LASER ABLATION
    OKUYAMA, M
    ASANO, J
    IMAI, T
    LEE, DH
    HAMAKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4107 - 4110
  • [7] FERROELECTRIC PBZR0.2TI0.8O3 THIN-FILMS ON EPITAXIAL Y-BA-CU-O
    RAMESH, R
    INAM, A
    CHAN, WK
    TILLEROT, F
    WILKENS, B
    CHANG, CC
    SANDS, T
    TARASCON, JM
    KERAMIDAS, VG
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3542 - 3544
  • [8] FERROELECTRIC MEMORIES
    SCOTT, JF
    DEARAUJO, CAP
    [J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
  • [9] INTERACTION OF PBTIO3 FILMS WITH SI SUBSTRATE
    SHICHI, Y
    TANIMOTO, S
    GOTO, T
    KUROIWA, K
    TARUI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5172 - 5177
  • [10] EFFECTS OF DISTURBING PULSES ON THE SWITCHABLE POLARIZATION OF PB(ZRTI)O3 THIN-FILM CAPACITORS
    TAYLOR, DJ
    LARSEN, PK
    CUPPENS, R
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1392 - 1394