Efficient blue-green light-emitting diodes of ZnSSe:Te/ZnMgSSe DH structure grown by molecular-beam epitaxy

被引：10

作者：

Lee, HC ^{[1
]}

Abe, T ^{[1
]}

Watanabe, M ^{[1
]}

Aung, ZM ^{[1
]}

Adachi, M ^{[1
]}

Shirai, T ^{[1
]}

Yamada, H ^{[1
]}

Kuroda, S ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Fac Engn, Dept Elect & Elect Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

Te-doped ZnSSe; Te cluster emission; light-emitting diode (LED); double hetero (DH); MBE;

D O I：

10.1016/S0022-0248(00)00281-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the optical properties of Te-doped ternary ZnSSe epilayers grown on (1 0 0) GaAs substrates by molecular-bean epitaxy for the first time. The case of ZnSxSe1-x-y:Te-y (x = 0.11, y = 0.032) specimen is represented by a good crystal quality; a good lattice matching to GaAs (Delta a/a < 0.19%), a rather small FWHM (<200 arcsec), and a large thermal activation energy (Delta E = 210 meV) in the thermal dissociation process of Te-n (n greater than or equal to 2) cluster emission, We have successfully fabricated ZnSSe:Te/ZnMgSSe DH-LEDs with an efficient blue-green emission (500 nm) and long-lived lifetime (> 1000 h) operated at 3 A/cm(2) (300 K). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1096 / 1099

页数：4

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