Degradation in II-VI laser diodes

被引：6

作者：

Nakano, K ^{[1
]}

Ishibashi, A ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

ZnMgSSe; laser diode; degradation; recombination enhanced defect reaction;

D O I：

10.4028/www.scientific.net/MSF.258-263.1329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aging studies of II-VI lasers and light emitting diodes show that these devices degrade not catastrophically, but gradually by recombination-enhanced defect reactions at preexisting defects. The activation energy and current dependence of the degradation process in devices were examined. ZnMgSSe-based materials are stable under current injection of at least up to 2 kA/cm(2), about 4 times larger than the current density needed for laser operation. Ways to improve device reliability are also discussed.

引用

页码：1329 / 1334

页数：6

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